Synthesis and study of the substrate effect on morphological properties of intrinsic silicon thin films
Keywords:
Silicon, AFM, Thin Solid FilmsAbstract
In this work, microcrystalline Si intrinsicsurfaces has been grown on substrateCorning glass 7059, steel and typical wafersc-Si exhibiting (111) preferential orientation.Microcrystalline silicon samples were preparedfrom plasma enhanced chemical vapor method(PECVD). Mofology was studied by AtomicForce Microscopy (AFM). Samples Si depositedon steel revealed regions characterizedinteracting with surface and/or subsurface andedges presents on substrate. A preferred growthin ramal form of Si intrinsic was found firstlyin Silicon films on typical wafers c-Si substrate.Typical c-Si has grain sizes of 100 μm whereas Sion substrates contains much smaller crystalliteswith grains sizes closer to 10nm. The nature ofthe growing roughness of the deposited Si waswell characterized by varing between 400 and750 nm.
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